Hynix 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2133-udimm-16gb-1x-fm M392B4G70DE0-YH9 Capacity 32GB (1x 32GB)

M392B4G70DE0-YH9 Capacity 32GB (1x 32GB) Brand Samsung Speed DDR3L-1333 - 1333MT/s - PC3L-10600 Voltage 1

This 8GB (1x 8GB) DDR3 1066 MT/s Dual rank

2xM368L2923DUN-CCC Capacity 2GB (2x 1GB) Brand Samsung Speed DDR-400 - 400MT/s - PC3200 Voltage 2

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3L 1600 MT/s 204-pin SODIMM RAM module from Crucial

but the effective rate is 1333 megatransfers per second (MT/s) because there are 666 million rising edges per second and 666 million falling edges per second of a clock signal running at 666 MHz

Hynix 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2133-udimm-16gb-1x-fm M392B4G70DE0-YH9 Capacity 32GB (1x 32GB)Product Overview This 4GB (1x 4GB) DDR3 1600 MT s RAM module from Hynix is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.